Design of a 30 Nm Novel 3-D Quad Gate Stacked Nano-Sheets FinFET-Reference-Cited by-同舟云学术

Design of a 30 Nm Novel 3-D Quad Gate Stacked Nano-Sheets FinFET

Published:2022-05-02 Issue:17 Volume:14 Page:11859-11868
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Ruhil Shaifali^ORCID,Dutta Umesh,Khanna Vandana,Shukla Neeraj Kumar

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01911-4.pdf

Reference44 articles.

1. Gupta KA, Anvekar DK, Venkateswarlu V (2013) Modeling of Short Channel MOSFET devices and analysis of design aspects for power optimisation. Int J Model Optim 3(3):266–271

2. Bakar ARA, Saad I (2016) Investigation on effect of tilt angle ion implantations for vertical double gate MOSFET. IEEE Reg Symp Micro Nanoelectron:100–103

3. Kuhn KJ (2011) CMOS scaling for the 22nm node and beyond: Device physics and technology. Int Symp VLSI Technol Syst Appl Proc 2–3, https://doi.org/10.1109/VTSA.2011.5872206

4. Rahul J, Srivastava A, Yadav S, Jha K (2012) Performance evaluation of junctionless vertical double gate MOSFET. Int Conf Device Circ Sys (ICDCS), IEEE 2012:440–442

5. Mishra A, Jha K, Pattanaik M (2014) Parameter variation aware hybrid TFET-CMOS based power gating technique with a temperature variation tolerant sleep mode. Microelectron J 45(11):1515–1521

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