Effect of Substrate Induced Surface Potential (SISP) on Threshold Voltage of SOI Junction-Less Field Effect Transistor (JLFET)
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00185-7.pdf
Reference12 articles.
1. Colinge J-P, Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O'Neill B, Blake A, White M, Kelleher AM, McCarthy B, Murphy R (2010) Nanowire transistors without junctions. Nat Nanotechnol 5:225–229
2. Taur Y, Chen H-P, Wang W, Lo S-H, Wann C (2012) On–off charge–voltage characteristics and DopantNumber fluctuation effects in Junctionless double-gate MOSFETs. IEEE Trans Electron Devices 59:863–866
3. Sahay S, Kumar MJ (2016) Realizing efficient volume depletion in SOI Junctionless FETs, J. Elect Dev Society 4:110–115
4. Celler GK (2003) Frontiers of silicon-on-insulator. J Appl Physiol 93:4955–4978
5. Singh B, Gola D, Singh K, Goel E, Kumar S, Jit S (2016) Analytical modeling of channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like doping profile. IEEE Trans Electron Devices 63:2299–2305
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