A New Technique for Improving Kink Effect in High-Voltage LDMOS Transistors: M-shape Drift Region
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01435-3.pdf
Reference29 articles.
1. Mehrad M, Zareiee M, Orouji AA (2017) Controlled kink effect in a novel high-voltage LDMOS transistor by creating local minimum in energy band diagram. IEEE Trans Electron Devices 64(10):4213–4218. https://doi.org/10.1109/TED.2017.2737531
2. Mehrad M (2016) Omega shape channel LDMOS: A novel structure for high voltage applications. Phys E Low-Dimens Syst Nanostructures 75:196–201. https://doi.org/10.1016/j.physe.2015.09.016
3. Madadi D, Orouji AA (2021) Scattering mechanisms in β-Ga2O3 junctionless SOI MOSFET: Investigation of electron mobility and short channel effects. Mater Today Commun 26:102044. https://doi.org/10.1016/j.mtcomm.2021.102044
4. Khoorabeh M, Orouji AA, Madadi D (2021) Improvement of a novel SOI- MESFET with an embedded GaN layer for high-frequency operations. Silicon. https://doi.org/10.1007/s12633-021-01063-x
5. Bohuslavskyi H et al (2019) Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening. IEEE Electron Device Lett 40(5):784–787. https://doi.org/10.1109/LED.2019.2903111
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