Qualitative Characterization of Solute Boundary Layer in Industrial Czochralski Growth of Silicon-Reference-Cited by-同舟云学术

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Qualitative Characterization of Solute Boundary Layer in Industrial Czochralski Growth of Silicon

Published:2019-03-20 Issue:2 Volume:12 Page:317-325
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Gao Mangmang,Gao Ang,Li Yan,Xu Haoran,Liang Sen,Li Haibo,Ma Lin,Kausar Shaheen

Funder

National Natural Science Foundation of China

Key Technology R&D Program of Ningxia Hui Autonomous Region

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-019-00131-7.pdf

Reference22 articles.

1. Burton JA, Prim RC, Slichter WP (1953) The distribution of solute in crystals grown from the melt. Part I. Theoretical. J Chem Phys 21(11):1987–1991

2. Burton JA, Kolb ED, Slichter WP, Struthers JD (1953) Distribution of solute in crystal grown from the melt. Part II. Experimental. J Chem Phys 21(11):1991–1996

3. Wilson LO (1978) On interpreting a quantity in the Burton, Prim and Slichter equation as a diffusion boundary layer thickness. J Cryst Growth 44(2):247–250

4. Garandet JP, Duffar T, Favier JJ (1990) On the scaling analysis of the solute boundary layer in idealized growth configurations. J Cryst Growth 106:437–444

5. Garandet JP, Rouzaud A, Duffer T, Camel D (1991) Comparison between order of magnitude and numerical estimates of the solute boundary layer in an idealized horizontal Bridgman configuration. J Cryst Growth 113:587–592

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1. Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique;Silicon;2020-09-14

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