Analysis of Double Gaussian Distribution at the Interface of Ni/Ta2O5/P-Si Schottky Barrier Diodes Using Temperature Dependent Current-Voltage (I-V) Measurements-Reference-Cited by-同舟云学术

Analysis of Double Gaussian Distribution at the Interface of Ni/Ta2O5/P-Si Schottky Barrier Diodes Using Temperature Dependent Current-Voltage (I-V) Measurements

Published:2020-02-11 Issue:1 Volume:13 Page:65-71
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Reddy Nallabala Nanda Kumar,Kukkambakam Chandramohan,Manjunath V.,Reddy Vasudeva Reddy Minnam

Funder

Science and Engineering Research Board

DST-FIST

University Grants Commission

TEQIP-II

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-020-00407-3.pdf

Reference38 articles.

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5. Yu J, Chen G, Li CX, Shafiei M, Ou JZ, du Plessis J, Kalantar-Zadeh K, Lai PT, Wlodarski W (2011). Sens Actuators A 172:9

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