Author:
Babich Alexey,Sherchenkov Alexey,Kozyukhin Sergey,Lazarenko Petr,Boytsova Olga,Shuliatyev Alexey
Funder
Ministry of Education and Science of the Russian Federation
Publisher
Springer Science and Business Media LLC
Reference16 articles.
1. Raoux S, Wełnic W, Ielmini D. Phase change materials and their application to nonvolatile memories. Chem Rev. 2010;110:240.
2. Burr GW, Breitwisch MJ, Franceschini M, Garetto D, Gopalakrishnan K, Jackson B, Kurdi B, Lam C, Lastras LA, Padilla A, Rajendran B, Raoux S, Shenoy RS. Phase change memory technology. J Vac Sci Technol B. 2010;28:223.
3. Yamada N, Ohno E, Akahira N, Nishiuchi K, Nagata K, Takao MJ. High speed overwritable phase change optical disk material. J Appl Phys. 1987;26:61.
4. Sherchenkov A, Kozyukhin S, Babich A. Estimation of kinetic parameters for the phase change memory materials by DSC measurements. J Therm Anal Calorim. 2014;117:1509.
5. Sherchenkov A, Kozyukhin S, Babich A, Shtern Y, Mironov R. Influence of doping on the crystallization kinetics of Ge–Sb–Te thin films for phase-change memory application. Proc SPIE. 2014;9440:944005-1.
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