Effect of Ti doping on the crystallography, phase, surface/interface structure and optical band gap of Ga2O3 thin films
Author:
Funder
National Science Foundation
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s10853-019-03663-w.pdf
Reference46 articles.
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3. Rubio EJ, Ramana CV (2013) Tungsten-incorporation induced red-shift in the bandgap of gallium oxide thin films. Appl Phys Lett 102:19193
4. Ogita M, Higo K, Nakanishi Y, Hatanaka Y (2001) Ga2O3 thin film for oxygen sensor at high temperature. Appl Surf Sci 175–176:721–725
5. Fleischer M, Höllbauer L, Meixner H (1994) Effect of the sensor structure on the stability of Ga2O3 sensors for reducing gases. Sens Actuators B 18:119–124
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