Al0.3Ga0.7As-GaAs microwave resonant tunneling oscillator
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
https://link.springer.com/content/pdf/10.1007/BF02995153.pdf
Reference16 articles.
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2. Brown (E. R.), Goodhue (W. D.), Sollner (T. C. L. G.). Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationnary-state tunneling theory.J. appl. Phys. (1988),64, pp. 1519–1529.
3. Kesan (V. P.), Mortazawi (A.), Miller (D. R.), Itoh (T.), Streetman (B. G.), Neikirk (D. P.). Microwave frequency operation of quantum well injection transit time (Qwitt) diode.Electronics Letters (1988),24, pp. 1473–1474.
4. Rydberg (A.), Gronqvist (H.), Kollberg (E.). A theoretical and experimental investigation on millimeter-wave quantum well oscillators.Microwave and Optical Technology Letters (1988),1, pp. 333–336.
5. Vassel (M. O.), Lee (J.), Lockwood (H. R.). Multibarrier tunneling in Ga1− xAlxAs/GaAs heterostructures.J. appl. Phys. (1983),54, pp. 5206–5213.
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1. GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications;Journal of Semiconductors;2023-10-01
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