Low field DC investigation of hot carrier trapping in silicon dioxide films

Author:

Strzałkowski I.,Marczewski M.,Kowalski M.,Wisłowski J.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Reference8 articles.

1. “The Physics of Hot-Carrier Degradation in Si MOSFETs”, Proceedings of a Satellite Workshop in connection with INFOS '89. In “INFOS '89”, Proceedings of the 6th International Conference on Insulating Films on Semiconductors, ed. by F. Koch, A. Spitzer (North-Holland, Amsterdam 1989)

2. D.R. Wolters, A.T.A. Zegers-van Duynhoven: In The Physics and Technology of Amorphous SiO2, ed. by R.A.B. Devine (Plenum, New York 1988) pp. 391–409; see also Ref. [1] pp. 565–577

3. A. Badihi, B. Eitan, I. Cohen, J. Shappir: Appl. Phys. Lett. 40, 396–398 (1982)

4. Y. Nissan-Cohen, J. Shappir, D. Frohman-Bentchkowsky: J. Appl. Phys. 54, 5793–5800 (1983)

5. M. Pepper: J. Phys. D 6, 2124–2130 (1973)

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