Identification of the dislocation type in germanium by means of etch pits-Reference-Cited by-同舟云学术

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Identification of the dislocation type in germanium by means of etch pits

Published:1966-09 Issue:1 Volume:45 Page:102-104
ISSN:0369-3554
Container-title:Il Nuovo Cimento B Series 10
language:en
Short-container-title:Nuov Cim B

Author:

Calzecchi F.,Gondi P.

Publisher

Springer Science and Business Media LLC

Subject

General Medicine

Link

http://link.springer.com/content/pdf/10.1007/BF02710592.pdf

Reference10 articles.

1. R. G. Rhodes:Imperfections and Active Centres in Semiconductors (Oxford, 1964).

2. P. J. Holmes:The Electrochemistry of Semiconductors (London, 1962).

3. H. C. Gatos andM. C. Lavine: inProgress in Sericonductors, vol. 9 (London, 1965), p. 1.

4. R. G. Rhodes, K. O. Batsford andD. J. Dane-Thomas:Journ. Electron, and Control 3, 403 (1957).

5. W. N. Vasilevskaya andE. G. Miselyuk:Sov. Phys. Solid State,3, 313 (1961).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. n-germanium converted top-type by dislocations;Lettere al Nuovo Cimento;1969-09

2. Overlapping phenomena of the space-charge cylinders and of the low-mobility rings around dislocations inn-type germanium;Il Nuovo Cimento B Series 10;1968-01

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