In-situ monitoring of interface formation using the phase shift of reflection high-energy electron diffraction intensity oscillations-Reference-Cited by-同舟云学术

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In-situ monitoring of interface formation using the phase shift of reflection high-energy electron diffraction intensity oscillations

Published:1995-05 Issue:5 Volume:60 Page:441-446
ISSN:0947-8396
Container-title:Applied Physics A Materials Science & Processing
language:en
Short-container-title:Appl. Phys. A

Author:

Braun W.,Ploog K.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF01538767.pdf

Reference32 articles.

1. L. Esaki, L.L. Chang: Phys. Rev. Lett.33, 495 (1974)

2. L.L. Chang, L. Esaki, R. Tsu: Appl. Phys. Lett.24, 593 (1974)

3. R. Dingle, W. Wiegmann, C.H. Henry: Phys. Rev. Lett.33, 827 (1974)

4. C. Weisbuch, B. Vinter:Quantum Semiconductor Structures (Academic, San Diego 1991)

5. C. Weisbuch: J. Cryst. Growth127, 742 (1993) and references therein

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