The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors

Published:1986-12 Issue:4 Volume:41 Page:291-295
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Symons J.,Ghannam M.,Nijs J.,Ammel A.,Schepper P.,Neugroschel A.,Mertens R.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00616051.pdf

Reference18 articles.

1. H.C. De Graaf: Solid St. Electr.10, 578 (1973)

2. T.H. Ning, R.D. Isaac: IEEE Trans. ED-27, 2051 (1980)

3. P. Ashburn, B. Soerowirdjo: IEEE Trans. ED-31, 853 (1984)

4. H.C. De Graaf, J.G. De Groot: IEEE Trans. ED-26, 1771 (1979)

5. M.A. Green, R.D. Godfrey: IEEE EDL-4, 225 (1983)

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transfer of excess charge carriers in ana-Si:H/crystalline-silicon heterojunction measured during the growth of the amorphous silicon layer;Physical Review B;1993-08-15

2. Silicon heterojunction bipolar power transistor with an amorphous Si:B alloy emitter;Applied Physics Letters;1992-09-14

3. Direct In-Situ Observation of Charge Carrier Separation During Formation of an Amorphous Silicon / Crystalline Silicon Heterojunction;MRS Proceedings;1992

4. Interface Characterization During Their Formation in Amorphous Silicon Solar Cell Structures by In-Situ Transient Photoconductivity Measurements;Tenth E.C. Photovoltaic Solar Energy Conference;1991

5. Simulation of high‐frequency capacitance‐voltage characteristics of amorphous/crystalline heterojunctions;Journal of Applied Physics;1990-08

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