First-principles investigation on initial stage of 2H-SiC(001) surface oxidation
Author:
Publisher
Elsevier BV
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-009-0133-3
Reference32 articles.
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3. Cho W J, Kosugi R, et al. Study on electron trapping and interface states of various gate dielectric materials in 4H-SiC metal-oxide-semiconductor capacitors. Appl Phys Lett, 2000, 77(13): 2054–2056
4. Bermudez V M. Photoemission study of oxygen adsorption on (001) silicon carbide surfaces. J Appl Phys, 1989, 66(12): 6084–6092
5. Righi M C, Pignedoli C A, Felice R D, et al. Ab initio Simulations of homoepitaxial SiC growth. Phys Rev Lett, 2003, 91(13): 136101
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