Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-010-4108-1.pdf
Reference18 articles.
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2. Morkoc H, Strite S, Gao G B, et al. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. J Appl Phys, 1994, 76: 1363
3. Iwanowski R J, Fronc K, Paszkowicz W, et al. XPS and XRD study of crystalline 3C-SiC grown by sublimation method. J Alloys Compd, 1999, 286: 143–147
4. Cao Q J, Zhang Y M, Zhang Y M, et al. Improved empirical DC I-V model for 4H-SiC MESFETs. Sci China Ser F: Inform Sci, 2008, 51: 1184–1192
5. Fukuda K, Kato M, Kojima K, et al. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(000 % MathType!MTEF!2!1!+- % feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXguY9 % gCGievaerbd9wDYLwzYbWexLMBbXgBcf2CPn2qVrwzqf2zLnharyav % P1wzZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC % 0xbbL8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yq % aqpepae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabe % qaamaaeaqbaaGcbaGafGymaeJbaebaaaa!3CDF! $$ \bar 1 $$ ) face. Appl Phys Lett, 2004, 84: 2088–2090
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms;Applied Surface Science;2018-01
2. On the pressure-dependent phonon characteristics and anomalous thermal expansion coefficient of 3C-SiC;Materials Science and Engineering: B;2017-12
3. Probing optical, phonon, thermal and defect properties of 3C–SiC/Si (001);Diamond and Related Materials;2015-02
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