On the theory of the diffusion of gold into dislocated silicon wafers-Reference-Cited by-同舟云学术

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On the theory of the diffusion of gold into dislocated silicon wafers

Published:1982-03 Issue:3 Volume:27 Page:171-176
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Seeger A.,Frank W.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00616669.pdf

Reference28 articles.

1. W.M.Bullis: Solid-State Electron.9, 143 (1966)

2. J.L.Lambert: Wiss. Ber. AEG-Telefunken45, 153 (1972)

3. J.L.Lambert: Wiss. Ber. AEG-Telefunken46, 1 (1973)

4. W.C.Dash: J. Appl. Phys.31, 2275 (1960)

5. W.R.Wilcox, T.J.LaChapelle: J. Appl. Phys.35, 240 (1964)

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1. Effects Related to Isotopic Disorder in Solids;Isotopes in Condensed Matter;2012-08-11

2. Interstitial-Substitutional Diffusion;Springer Series in Solid-State Sciences;2007

3. Intrinsic Point Defects;Computational Microelectronics;2004

4. Applications of isotope effects in solids;Journal of Materials Science;2003

5. Decoration of defects in silicon with gold, and related subjects;Physica Status Solidi (a);1987-11-16

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