1. For a review see F. Ali and A. Gupta, HEMT and HBTs: Devices, Fabrication, and Circuits (Boston, MA: Artech House, 1991).
2. A.Y. Cho et al., “Continuous Room-Temperature Operation of GaAs-AlxGa1-xAs Double-Heterostructure Lasers Prepared by Molecular Beam Epitaxy,” Appl. Phys. Lett., 28 (1976), p. 501.
3. W.T. Tsang, “Low-Current-Threshold and High Lasting Uniformity GaAs-AlxGa1-xAs Double-Heterostructure Lasers Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett., 34 (1979), p. 501.
4. T. Mimura et al., “A New Field Effect Transistor with Selectively Doped GaAs/n-Alx Ga1-x As Heterojunctions,” Jpn. J. Appl. Phys., 19 (1980), p. L225.
5. S. Tiwari, S.L. Wright, and A.W. Kleinsasser, “Transport and Related Properties of (Ga,Al)As/GaAs Double-Heterostructure Bipolar Junction Transistors,” IEEE Transactions on Electron Devices, ED-34 (1987), p. 185.