Author:
Pöbl M.,Claassen M.,Freyer J.
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,Applied Mathematics,Electrical and Electronic Engineering
Reference11 articles.
1. Nishizawa, J.; Watanabe, Y.: High frequency properties of the avalanching negative resistance diode. Sci. Rep. Res. Inst Tohoku Univ. 10 (1958) 91–108
2. Freyer, J.; Pöbl, M.; Harth, W.; Claassen, M.; Gaul, L.; Grothe, H.: 70 GHz GaAs TUNNETT-Diode. Proc. of the 20th EuMC (1990) Budapest 599–604
3. Kidner, C.; Eisele, H.; Haddad, G. I.: Tunnel Injection Transit Time Diodes for W-Band Power Generation. Electron. Lett. 28 (1992) 511–513
4. Pöbl, M.; Freyer, J.: Characterization of W-band CW TUNNETT-diode. Proc. of the 21st EuMC (1991) Stuttgart, 1496–1501
5. Claassen, M.: Chap. 6 in Silicon-Based Millimeter Wave Devices. Eds.: J. F. Luy; P. Russer; M. Claassen. Springer Verlag, erscheint 1993–1994
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献