Growth and optical device evaluation of P-type conductive lec gaas Co-doped with in and zn-Reference-Cited by-同舟云学术

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Growth and optical device evaluation of P-type conductive lec gaas Co-doped with in and zn

Published:1987-11 Issue:6 Volume:16 Page:405-409
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Fujii Takashi,Fukuda Tsuguo

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02655493.pdf

Reference11 articles.

1. P. Petroff and R. H. Hartman, Appl. Phys. Lett.23, 469 (1973).

2. G. Jacob, M. Deseaux, J. P. Farges, Van den Boom and P. J. Rocsnor, J. Cryst. Growth61, 417 (1983).

3. R. E. Lee, A. T. Hunter, R. P. Bryan, H. M. Olsen, H. V. Winston and R. S. Beaibien, Technical Digest GaAs Isymposium, Boston, 1984, p45.

4. T. Kobayashi, H. Kohda, H. Nakanishi, F. Hyuga and K. Koshikawa, Proceeding of Semi-Insulating III-V Materials Conference, Hakone, 1986, pl7.

5. M. Nakajima, T. Katsumata, K. Terashima and K. Ishida, Jpn. J. Appl. Phys.24, L65 (1985).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS;Defect Control in Semiconductors;1990

2. Dislocation density reduction by isoelectronic impurities in semiconductors;Applied Physics Letters;1989-05-15

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