Physics of High-Speed Transistors
Author:
Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4899-1242-8.pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Model for Multiparametric Analysis of the Parameters of Short-Channel HEMT-Type Transistors;Semiconductors;2022-06
2. Leakage Current through the Gate Dielectric in Transistors with Channel Lengths of up to 100 nm;Semiconductors;2022-06
3. An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation;IEEE Journal of the Electron Devices Society;2021
4. Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm;Semiconductors;2020-09
5. Impact of the Potential of Scattering at Radiation-Induced Defects on Carrier Transport in GaAs Structures;Semiconductors;2020-09
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