Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. M.J. Kumar, R. Vishnoi, P. Pandey, Tunnel field-effect transistors (TFET): modelling and simulations (John wiley & Sons, Hoboken, 2017)
2. S. Anand, S. Intekhab Amin, R.K. Sarin, Performance analysis of different material based dual electrode doping-less TFET. Eur. Adv. Mater. Congr. 6(2), 384–387 (2017)
3. G.E. Moore, Cramming more components onto integrated circuits. Proc. IEEE 86(1), 82–85 (1998)
4. P.H. Woerlee et al., RF-CMOS performance trends. IEEE Trans. Electron Devices 48(8), 1776–1782 (2001)
5. S. Bangsaruntip, G.M. Cohen, A. Majumdar, J.W. Sleight, Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Electron Device Lett. 31(9), 903–905 (2010)
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献