Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer-Reference-Cited by-同舟云学术

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Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

Published:2014-11-11 Issue:1 Volume:44 Page:117-120
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Al-Jawhari H. A.,Caraveo-Frescas J. A.,Hedhili M. N.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-014-3504-8.pdf

Reference13 articles.

1. E. Fortunato, P. Barquinha, and R. Martins, Adv. Mater. 24, 2945 (2012).

2. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 0321131 (2008).

3. H. Yabuta, N. Kaji, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 97, 0721111 (2010).

4. R. Martins, V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and E. Fortunato, Proc. of SPIE 8263, 8263151 (2012).

5. J.A. Caraveo-Frescas, P. Nayak, H. Al-Jawhari, D. Granato, U. Schwingenschlögl, and H. Alshareef, ACS Nano 7, 5160 (2013).

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1. Mobility Enhancement in P-Type SnO Thin-Film Transistors via Ni Incorporation by Co-Sputtering;IEEE Electron Device Letters;2022-02

2. Anode-Side Failure of a Cuprous Oxide Semiconductor Caused by High-Density Current Loading;Journal of Electronic Materials;2019-08-22

3. Investigation of structural properties of electron-beam deposition of zinc oxide coatings doped with copper;Surfaces and Interfaces;2017-03

4. Recent Developments in p-Type Oxide Semiconductor Materials and Devices;Advanced Materials;2016-02-16

5. A review of recent advances in transparent p-type Cu2O-based thin film transistors;Materials Science in Semiconductor Processing;2015-12

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