Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11 $$\bar 2$$ 0) surface0) surface-Reference-Cited by-同舟云学术

Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11 $$\bar 2$$ 0) surface0) surface

Published:2005-01 Issue:1 Volume:34 Page:91-95
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Katsuno Masakazu,Ohtani Noboru,Fujimoto Tatsuo,Yashiro Hirokatsu

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-005-0184-4.pdf

Reference12 articles.

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2. N. Ohtani, T. Fujimoto, M. Katsuno, T. Aigo, and H. Yashiro, Mater. Sci. Forum 29, 389 (2002).

3. N. Ohtani, M. Katsuno, T. Fujimoto, and H. Yashiro, in Silicon Carbide, eds. W.J. Choyke, H. Matsunami, and G. Pensl (Berlin: Springer, 2003), p. 137.

4. P.G. Neudeck and J.A. Powell, IEEE Electron Dev. Lett. 15, 63 (2994).

5. J. Takahashi, M. Kanaya, and Y. Fujiwara, J. Cryst. Growth 135, 61 (1994).

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1. Increase of SiC sublimation growth rate by optimizing of powder packaging;Journal of Crystal Growth;2007-07

2. Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11 $$\bar 2$$ 0) surface0) surface;Journal of Electronic Materials;2005-03