Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior-Reference-Cited by-同舟云学术

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Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior

Published:2012-06-29 Issue:10 Volume:41 Page:2810-2815
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Chan P.-Y.,Suarez E.,Gogna M.,Miller B.I.,Heller E.K.,Ayers J.E.,Jain F.C.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-012-2176-5.pdf

Reference19 articles.

1. G.E. Moore, Proc. IEEE 86, 82 (1998).

2. B.P. Wong, A. Mittal, Y. Cao, and G. Starr, Nano-CMOS Circuit and Physical Design (Hoboken: Wiley, 1998).

3. N.S. Kim, T. Austin, D. Baauw, T. Mudge, K. Flautner, J.S. Hu, M.J. Irwin, M. Kandemir, and V. Narayanan, Computer 36, 68 (2003).

4. A. Agarwal, C.H. Kim, S. Mukhopadhyay, and K. Roy, Proceedings of the 41st annual Design Automation Conference (New York, NY: ACM, 2004).

5. A. Agarwal, S. Mukhopadhyay, A. Raychowdhury, K. Roy, and C.H. Kim, IEEE Micro 26, 68 (2006).

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1. Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs);International Journal of High Speed Electronics and Systems;2017-06-27

2. Quantum Dot Channel (QDC) Field Effect Transistors (FETs) and Floating Gate Nonvolatile Memory Cells;Journal of Electronic Materials;2015-07-09

3. Fabrication and Simulation of InGaAs Field-Effect Transistors with II–VI Tunneling Insulators;Journal of Electronic Materials;2015-04-18

4. Quantum Dots of Traditional III–V Semiconductor Compounds;Virtual Synthesis of Nanosystems by Design;2015

5. ZNS/ZNMGSETE/ZNS II-VI Energy Barrier for INGAAS Substrates;International Journal of High Speed Electronics and Systems;2014-03

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