Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications-Reference-Cited by-同舟云学术

Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications

Published:2002-05 Issue:5 Volume:31 Page:361-365
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Cheng L.,Pan M.,Scofield J.,Steckl A. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-002-0083-x.pdf

Reference6 articles.

1. For an excellent source of information, see Y.S. Park, ed., “SiC Materials and Devices,” Semiconductors and Semimetals, Vol. 52, Series eds.: R.K. Willardson and E.R. Webre (New York: Academic Press, 1998), pp. 1–18.

2. M. Mehregany, C.A. Zorman, N. Rajan, and C.H. Wu, Proc. IEEE 86, 1594 (1998).

3. J. Chen, J. Scofield, and A.J. Steckl, J. Electrochem. Soc. 147, 3845 (2000).

4. M. Mehregany, C.A. Zorman, N. Rajan, and C.H. Wu, Mater. Sci. Forum 338–342, 541 (2000).

5. S. Madapura, A.J. Steckl, and M.J. Loboda, J. Electrochem. Soc. 146, 1197 (1999).

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