Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering-Reference-Cited by-同舟云学术

Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering

Published:2002-05 Issue:5 Volume:31 Page:384-390
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Polyakov A. Y.,Smirnov N. B.,Govorkov A. V.,Shlensky A. A.,Mil’vidskii M. G.,Pearton S. J.,Faleev N. N.,Bublik V. T.,Chsherbatchev K. D.,Osinsky A.,Norris P. E.,Dravin V. A.,Wilson R. G.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-002-0088-5.pdf

Reference18 articles.

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2. M.A. Herman, Semiconductor Superlattices (Berlin: Akademie-Verlag, 1986), pp. 109–112.

3. J. Werner, E. Kapon, A.C. Von Lehmen, R. Bhat, E. Colas, N.E. Stoffel, and S.A. Schwartz, Appl. Phys. Lett. 53, 1693 (1988).

4. E. Kapon, N.C. Stoffel, E.A. Dobisz, and R. Bhat, Appl. Phys. Lett. 52, 351 (1988).

5. T. Venkatesan, S.A. Schwartz, D.M. Hwang, R. Bhat, M. Koza, H.W. Yoon, P. Mei, Y. Arakawa, and A. Yariv, Appl. Phys. Lett. 49, 701 (1986).

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