The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs-Reference-Cited by-同舟云学术

The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs

Published:2012-10-02 Issue:1 Volume:42 Page:15-20
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Esposto Michele,Lecce Valerio Di,Bonaiuti Matteo,Chini Alessandro

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-012-2268-2.pdf

Reference20 articles.

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