1. D.J. Frank, R.H. Dennard, E. Nowak, P.M. Solomon, Y. Taur, and H.S.P. Wong, Proc. IEEE 89, 259–287 (2001).
2. L. Xue, C.C. Liu, H.S. Kim, S. Kim, and S. Tiwari, IEEE Trans. Electron Dev. 50, 601–609 (2003).
3. S.F. Al-Sarawi, D. Abbott, and P.D. Franzon, IEEE Trans. Compon. Packag. Manuf. Technol. B 21, 2–14 (1998).
4. J.C. Lin, W.C. Chiou, K.F. Yang, H.B. Chang, Y.C. Lin, E.B. Liao, J.P. Hung, Y.L. Lin, P.H. Tsai, Y.C. Shih, T.J. Wu, W.J. Wu, F.W. Tsai, Y.H. Huang, T.Y. Wang, C.L. Yu, C.H. Chang, M.F. Chen, S.Y. Hou, C.H. Tung, S.P. Jeng, and D.C.H. Yu, Electron Devices Meeting (IEDM), 2010 IEEE International (2010), pp. 2.1.1–2.1.4.
5. K.H. Lu, X. Zhang, S.K. Ryu, J. Im, R. Huang, and P.S. Ho, Proceedings of Electronic Components and Technology Conference (San Diego, CA, 2009), pp. 630–634.