Author:
Debbarma Manish,Das Subhendu,Debnath Bimal,Ghosh Debankita,Chanda Sayantika,Bhattacharjee Rahul,Chattopadhyaya Surya
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics
Reference92 articles.
1. R.J. Nelmes, M.I. McMahon, Structural transitions in the Group IV, III–V and II–VI semiconductors under pressure, in High Pressure in Semiconductor Physics I, vol. 54, ed. by T. Suski, W. Paul (Academic Press, New York, 1998), pp. 145–247
2. K. Dybko, W. Szuszkiewicz, E. Dynowska, W. Paszkowicz, B. Witkowska, Phys. B 256, 629–632 (1998)
3. K.U. Gawlik, L. Kipp, M. Skibowski, N. Orłowski, R. Manzke, Phys. Rev. Lett. 78, 3165–3168 (1997)
4. S.H. Groves, R.N. Brown, C.R. Pidgeon, Phys. Rev. 161, 779–793 (1967)
5. J. Wang, M. Isshiki, Wide-Band-gap II–VI Semiconductors: Growth and properties, Springer Handbook of Electronic and Photonic Materials (Springer, Berlin, 2006), pp. 325–342
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献