1. Fang, Z.M., Ma, K.Y., Jaw, D.H., Cohen, R.M. and Stringfellow, G.B. (1990)J. Appl. Phys.
67 7034.
2. Osbourn, G.C. (1984)J. Vac. Sci. Technol. B
2,176.
3. Osbourn, G.C., Gourley, P.L., Fritz, I.J., Biefeld, R.M., Dawson, L.R. and Zipperian, T. E. (1987) in “Semiconductors and Semimetals,” Vol.24,(eds. R. K. Willardson and A. G. Beer) Academic Press, New York pp. 459–503.
4. Kurtz, S.R., Osbourn, G.C., Biefeld, R.M. and Lee, S.R.(1988)
Appl. Phys. Lett.,53,216.
5. Kurtz, S.R., Osbourn, G.C., Biefeld, R.M., Dawson, L.R. and Stein, H.J.(1988)
Appl. Phys. Lett.,52,83.