Annealing of Defects in Ion-Implanted Layers by Pulsed Laser Radiation-Reference-Cited by-同舟云学术

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Annealing of Defects in Ion-Implanted Layers by Pulsed Laser Radiation

Published:1977 Issue: Volume: Page:445-451
ISSN:
Container-title:Ion Implantation in Semiconductors 1976
language:
Short-container-title:

Author:

Kachurin G. A.,Bogatyriov V. A.,Romanov S. I.,Smirnov L. S.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4613-4196-3_47.pdf

Reference7 articles.

1. G. A. Kachurin, N. B. Pridachin, and L. S. Smirnov, Fiz. Tekh. Poluprovod., 9: 1428, 1975.

2. V. A. Bogatyriov, A. A. Gavrilov, G. A. Kachurin, and L. S. Smirnov, Fiz. Tekh. Poluprovod., 10: 1392, 1976.

3. Lian Chi-Chao and D.N. Nazledov, Fiz. Tverd. Tela, 3: 1458, 1961.

4. V. V. Gavrushko and O. V. Kosogov, Fiz. Tekh. Poluprovod., 4: 2378, 1970.

5. J. W. Cleland and J. H. Crawford, Jr., Phys. Rev. 95: 1177, 1954.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser Processing of Semiconductors;Materials Processing: Theory and Practices;1983

2. Crystallization of ion implanted silicon layers by the nanosecond laser pulses;Radiation Effects;1980-01

3. Pulsed laser annealing of zinc implanted GaAs;Electronics Letters;1978

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