Investing the effectiveness of retention performance in a non-volatile floating gate memory device with a core-shell structure of CdSe nanoparticles-Reference-Cited by-同舟云学术

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Investing the effectiveness of retention performance in a non-volatile floating gate memory device with a core-shell structure of CdSe nanoparticles

Published:2016-03 Issue:2 Volume:12 Page:276-280
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Lee Dong-Hoon,Kim Jung-Min,Lim Ki-Tae,Cho Hyeong Jun,Bang Jin Ho,Kim Yong-Sang

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-016-5387-8.pdf

Reference23 articles.

1. R. J. Tseng, J. X. Huang, J. Ouyang, R. B. Kaner, and Y. Yang, Nano Lett. 5, 1077 (2005).

2. W. Lu and C. M. Lieber, Nat. Mater. 6, 841 (2007).

3. J. C. Scott and L. D. Bozano, Adv. Mater. 19, 1452 (2007).

4. Q. D. Ling, Y. Song, S. J. Ding, C. X. Zhu, D. S. H. Chan, D. L. Kwong, E. T. Kang, and K. G. Neoh, Adv. Mater. 17, 455 (2005).

5. L. E. Hueso, I. Bergenti, A. Riminucci, Y. Q. Zhan, and V. Dediu, Adv. Mater. 19, 2639 (2007).

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