Improving Electrical Stability of a-InGaZnO Thin-Film Transistors with Thermally Deposited Self-Assembled Monolayers
Author:
Funder
Inha University
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s13391-020-00232-1.pdf
Reference28 articles.
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3. Tan, C.M., Chen, X.: Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress—a modeling approach. Nano Converg. 1, 11 (2014)
4. Park, S.-H.K., et al.: 4.3: invited paper: high mobility oxide TFT for large area high resolution AMOLED. SID Symp. Dig. Tech. Pap. 44, 18–21 (2013)
5. Yu, X., Marks, T.J., Facchetti, A.: Metal oxides for optoelectronic applications. Nat. Mater. (2016). https://doi.org/10.1038/nmat4599
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