Bismuth-Implanted Silicon Reference Material Revisited: The Concept of Traceability and the Individual Characterisation of Chips-Reference-Cited by-同舟云学术

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Bismuth-Implanted Silicon Reference Material Revisited: The Concept of Traceability and the Individual Characterisation of Chips

Published:1995 Issue: Volume: Page:477-484
ISSN:
Container-title:Application of Particle and Laser Beams in Materials Technology
language:
Short-container-title:

Author:

Wätjen U.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-015-8459-3_33

Reference9 articles.

1. Moret H. and Louwerix E., Microbalance for ultrahigh-vacuum applications, Vac. Microbalance Tech. 5, 59 (1966).

2. Moret H., Louwerix E. and Sattler E., Comments on the applications and improvement of a UHV microbalance, Vac. Microbalance Tech. 7, 173 (1970).

3. Wätjen U., Bax H. and Rietveld P., Evaporated and implanted reference layers for calibration in surface analysis, Surf. Intetf. Anal 19, 253–258 (1992).

4. Wätjen U., Schroyen D., Bombelka E. and Rietveld P., Thin reference layers available for calibration purposes in ion beam analysis, Nucl. Instr. and Meth. B50, 172 (1990).

5. Mitchell L.V., Eschbach H.L., Avaldi L. and Dobma W., Characterisation of a new batch of ion implanted Bi in silicon specimens for use as primary reference surface standards, Nucl. Instr. and Meth. 218, 91 (1983).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Antimony implanted in silicon – A thin layer reference material for surface analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04

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