Evaluation Of The Gap State Distribution In a-Si:H By SCLC Measurements
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Published:2002
Issue:
Volume:
Page:253-256
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ISSN:
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Container-title:Photovoltaic and Photoactive Materials — Properties, Technology and Applications
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language:
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Author:
Eray A.,Nobile G.
Publisher
Springer Netherlands
Reference7 articles.
1. den Boer, W. (1981) Determination of midgap density of states in a-Si:H using SCLC measurements, J. Phys. (Paris), 42, C4–451.
2. Nespurek, S. and Sworakowski, J. (1980) Use of SCLC measurements to determine the properties of enegetic distributions of bulk traps, J. Appl. Phys, 51, 2098.
3. Mackenzie, KD., Le Comber, P.G. and Spear, W.E. (1982) The density of states in amorphous silicon determined by SCLC measurements, Phil. Mag, 46, 377–389.
4. Cech, V. (1997) Determination of the bulk density of states in a-Si:H by steady state SCLC, Solid State Electronics, 41, 81–86.
5. Okat, T. (2001) Ms Thesis, Hacettepe University.