Review of Physical Models for MOS Transistors-Reference-Cited by-同舟云学术

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Review of Physical Models for MOS Transistors

Published:1977 Issue: Volume: Page:541-571
ISSN:
Container-title:Process and Device Modeling for Integrated Circuit Design
language:
Short-container-title:

Author:

Klaassen F. M.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-011-7583-8_19.pdf

Reference30 articles.

1. H.K.J. Ihantola and J.L. Moll. Sol. St. Electr. 7 (1964) 423.

2. C.T. Sah and H.C. Pao, I.E.E.E. Trans ED-13 (1966) 393.

3. J.A. van Nielen and O.W. Memelink, Phil. Res. Rep. 22 (1967) 35.

4. J.E. Meyer, RCA Rev. 32 (1971) 42.

5. G. Merckel a.o., IEEE Trans. ED-19 (1972) 681.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theorie des Ladungstransports;GaAs-Feldeffekttransistoren;1989

2. Theorie des Ladungstransports;GaAs-Feldeffekttransistoren;1985

3. Modellierung elektrischer Bauelemente;Simulation elektrischer Schaltungen auf dem Rechner;1985

4. Comparison between two-dimensional short-channel MOSFET models;IEE Proceedings I Solid State and Electron Devices;1983

5. Physics and Modeling of Submicron Insulated-Gate Field-Effect Transistors. I;VLSI Electronics Microstructure Science;1981

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