A Physics Based Analytical Model for the Threshold Voltage of a Normally-off AlGaN/GaN FinFET
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-97604-4_32
Reference12 articles.
1. E. Ture, P. Brukner, B.-J. Godejohann, R. Aidam, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, O. Ambacher, High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers. J. Electron Devices Soc. 4(1) (2016)
2. K. Ohi, T. Hashizume, Drain current stability and controllability of threshold voltage and subthreshold current in a multi-mesa-channel AlGaN/GaN high electron mobility transistor. Jpn. J. Appl. Phys. 48, 1–5 (2009)
3. K. Ohi, J.T. Asubar, K. Nishiguchi, T. Hashizume, Current stability in multi-mesa-channel AlGaN/GaN HEMTs. IEEE Trans. Electron Devices 60, 2997–3004 (2013)
4. M.A. Alsharef, R. Granzner, F. Schwierz, Theoretical investigation of trigate AlGaN/GaN HEMTs. IEEE Trans. Electron Devices 60, 3335–3341 (2013)
5. G. Steude, B.K. Meyer, A. Goldner, A. Hoffmann, A. Kaschner, F. Bechstedt, H. Amano, I. Akasaki, Strain modification of GaN in AlGaN/GaN epitaxial films. Jpn. J. Appl. Phys. 38, 498–500 (1999)
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin–HEMTs;IEEE Transactions on Electron Devices;2022-05
2. A Unified Depletion/Inversion Model for Heterojunction Trigate FinFETs DC Characteristics;IEEE Access;2021
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3