Si(100):H and Ge(100):H Dimer Rows Contrast Inversion in Low-temperature Scanning Tunneling Microscope Images
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-51847-3_4
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2. Fuechsle, M., Miwa, J.A., Mahapatra, S., Ryu, H., Lee, S., Warschkow, O., Hollenberg, L.C.L., Klimeck, G., Simmons, M.Y.: A single-atom transistor. Nat. Nanotechnol. 7, 242 (2012). doi: 10.1038/nnano.2012.21
3. Piva, P.G., DiLabio, G.A., Pitters, J.L., Zikovsky, J., Rezeq, M., Dogel, S., Hofer, W.A., Wolkow, R.A.: Field regulation of single-molecule conductivity by a charged surface atom. Nature 435, 658 (2005). doi: 10.1038/nature03563
4. Hersam, M.C., Guisinger, N.P., Lyding, J.W., Thompson, D.S., Moore, J.S.: Atomic-level study of the robustness of the Si(100)-2×1: H surface following exposure to ambient conditions. App. Phys. Lett. 78, 886 (2001). doi: 10.1063/1.1348322
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