Author:
Suganuma Katsuaki,Jiu Jinting
Publisher
Springer International Publishing
Reference201 articles.
1. Rupp R, Miesner C, Zverev I (2001) Combination of new generation CoolMOS and thinQ! Silicon Carbide Schottky diodes: new horizons in hard switching applications. In: Proceedings of the 2001 power conversion intelligent motion conference (PCIM 2001), Chicago, 2001
2. Shenai K, Dudley M, Davis RF (2013) Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices. ECS J Solid State Sci Technol 2:N3055–N3063
3. Millan J (2012) A review of WBG power semiconductor devices. In: Proceedings of the 2012 international semiconductor conference (CAS), vol 1, pp 57–66
4. Ryu S, Hull B, Dhar S et al (2010) Performance, reliability, and robustness of 4H-SiC power DMOSFETs. Mater Sci Forum 645–648:969–974
5. Buttay C, Planson D, Allard B et al (2011) State of the art of high temperature power electronics. Mater Sci Eng B 176:283–288
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