Geometric Programming: Chaperoning the Optimization of Symmetric FinFET Circuits

Author:

Goswami Magnanil

Publisher

Springer International Publishing

Reference11 articles.

1. Colinge, J.P., Colinge, C.A.: The MOS Transistor. In: Physics of Semiconductor Devices. Springer, New York (2002)

2. Taur, Y., Ning, T.: Fundamentals of Modern VLSI Devices. Cambridge University Press, Cambridge (1998)

3. Lee, Z.K., McIlrath, M.B., Antoniadis, D.A.: Inverse modeling of MOSFET’s using I–V characteristics in the subthreshold region. In: Technical Digest IEDM, pp. 683–686, Washington (1997)

4. Chauhan, Y.S., Lu, D.D., Venugopalan, S., Khandelwal, S., Duarte, J.P., Paydavosi, N., Niknejad, A., Hu, C.: FinFET Modeling for IC Simulation and Design using the BSIM-CMG Standard. Elsevier, San Diego (2015)

5. Boyd, S., Kim, S.J., Vandenberghe, L., Hassibi, A.: A Tutorial on Geometric Programming. Technical report, Stanford University and University of California (2005)

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