1. R.H. Fowler, L. Nordheim, Electron emission in intense electric fields. Proc R Soc A 119(781), 173–181 (1928)
2. Y. Choi et al., A 20 nm 1.8 V 8 Gb PRAM with 40 MB/s program bandwidth, in Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC) (2012), pp. 46–47
3. H.-S.P. Wong, C. Ahn, J. Cao, H.-Y. Chen, S.W. Fong, Z. Jiang, C. Neumann, S. Qin, J. Sohn, Y. Wu, S. Yu, X. Zheng, H. Li, J.A. Incorvia, S.B. Eryilmaz, K. Okabe, Stanford memory trends, https://nano.stanford.edu/stanford-memory-trends , Accessed 12 Oct 2016
4. R. Atiken, System requirements for memories, in International Electron Devices Meetings Short Course Material (2015)
5. B.C. Lee, E. Ipek, O. Mutlu, D. Burger, Architecting phase change memory as a scalable DRAM alternative, in Proceedings of International Symposium on Computer Architecture (ISCA) (2009)