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Springer International Publishing
Reference25 articles.
1. D.J. Foster, in Electronic Materials, Silicon Processing: CMOS Technology (Springer, New York, 1991), pp. 173–191
2. D.J. Dumin, Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability (World Scientific, Singapore, 2002)
3. S.C. Sun, J.D. Plummer, Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces. IEEE Trans. Electron Devices ED-27 (8), 1497–1508 (1980)
4. S. Takagi, A. Toriumi, M. Iwase, H. Tango, On the universality of inversion layer mobility in Si MOSFET’s: Part I-effects of substrate impurity concentration. IEEE Trans. Electron Devices 41(12), 2357–2362 (1994)
5. R.S. Saxena, M.J. Kumar, in Trench Gate Power MOSFET: Recent Advances and Innovations, ed. by S. Jit. Advances in Microelectronics and Photonics (Nova Science Publishers Inc., New York, 2012), pp. 1–23