Gallium Evaporation Behavior for Purification in Molecular Beam Epitaxy
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-51580-9_8
Reference10 articles.
1. M. J. Manfra, “Molecular Beam Epitaxy of Ultra-High-Quality AlGaAs/GaAs Heterostructures: Enabling Physics in Low-Dimensional Electronic Systems,” Annu. Rev. Condens. Matter Phys, 5 (2014), 347–73
2. G. C. Gardner et al., “Modified MBE Hardware and Techniques and Role of Gallium Purity for Attainment of Two Dimensional Electron Gas Mobility > 35 × 106 cm2/Vs in AlGaAs/GaAs Quantum Wells Grown by MBE,” Journal of Crystal Growth, 441 (2016), 71–77
3. Kyungjean Min, “Analysis of High-Purity of Ga by ICP-MS,” (MS thesis, Purdue University, 2014)
4. M. A. Herman and H. Sitter, “Molecular Beam Epitaxy, Fundamentals and Current Status,” Springer (1996)
5. I. Langmuir, “The Vapor Pressure of Metallic Tungsten,” Phys. Rev., 2 (11) (1913), 329–342
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