Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon-Reference-Cited by-同舟云学术

Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon

Published:2009 Issue: Volume: Page:169-182
ISSN:0303-4216
Container-title:Topics in Applied Physics
language:
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Author:

Andresen Søren E. S.,McCamey Dane R.,Brenner Rolf,Ahrens Marc A.,Mitic Mladen,Chan Victor C.,Gauja Eric,Hudson Fay E.,Ferguson Andrew J.,Buehler Tilo M.,Reilly David J.,Clark Robert G.,Dzurak Andrew S.,Hamilton Alex R.,Wellard Cameron J.,Yang Changyi,Hopf Toby,McCallum Jeff,Jamieson David N.,Hollenberg Lloyd C. L.,Hutchison Wayne D.,Huebl Hans,Brandt Martin S.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-540-79365-6_9.pdf

Reference24 articles.

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3. A.S. Dzurak et al., Charge-based silicon quantum computer architectures using controlled single-ion implantation, arXiv: cond-mat/0306265 (2003)

4. L.C.L. Hollenberg, A.D. Greentree, A.G. Fowler, C.J. Wellard, Two-dimensional architectures for donor-based quantum computing. Phys. Rev. B 74, 045311 (2006)

5. A.K. Ramdas, S. Rudriguez, Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors. Rep. Prog. Phys. 44, 1297–1397 (1981)

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