Laser beam defocusing at 1.06 ?m by carrier excitation in silicon-Reference-Cited by-同舟云学术

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Laser beam defocusing at 1.06 ?m by carrier excitation in silicon

Published:1988-03 Issue:3 Volume:45 Page:121-124
ISSN:0721-7269
Container-title:Applied Physics B Photophysics and Laser Chemistry
language:en
Short-container-title:Appl. Phys. B

Author:

Jun Chen,Eichler H. -J.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Physics and Astronomy,Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1007/BF00695279.pdf

Reference7 articles.

1. J.P. Woerdman, B. Bölger: Phys. Lett.30A, 164 (1969)

2. R.K. Jain: Opt. Eng.21, 199 (1982)

3. H.-J. Eichler, Chen Jun, K. Richter: Appl. Phys. B42, 215 (1987)

4. H.-J. Eichler, M. Glotz, A. Kummrow, K. Richter, X. Yang: Phys. Rev.35 (to be published)

5. Springer Ser. Chem. Phys.;E.W. Stryland Van,1982

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