Failure Probability due to Radiation-Induced Effects in FinFET SRAM Cells under Process Variations
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10836-024-06102-0.pdf
Reference32 articles.
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5. Boukortt NEI, Lenka TR, Patane S, Crupi G (2022) Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure. Electronics 11:91. https://doi.org/10.3390/electronics11010091
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