Gallium phosphide (GaP), electron concentration and mobility-Reference-Cited by-同舟云学术

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Gallium phosphide (GaP), electron concentration and mobility

Published: Issue: Volume: Page:1-8
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Container-title:Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties
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Springer-Verlag

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http://link.springer.com/content/pdf/10.1007/10832182_158.pdf

Reference22 articles.

1. Montgomery, H. C., Feldmann, W. L.: J. Appl. Phys. 36 (1965) 3228.

2. Nasledov, D. N., Negreskul, V. V., Slobodchikov, S. V.: Sov. Phys. Solid State (English Transl.) 7 (1965) 1549; Fiz. Tvera. Tela 7 (1965) 1912.

3. Epstein, A. S.: J. Phys. Chem. Solids 27 (1966) 1611.

4. Miyauchi, T., Sonomura, H., Yamamoto, N.: Japan. J. Appl. Phys. 6 (1967) 1409.

5. Nicklin, R., Russell, A. W., Newman, P. C.: Electron. Lett. 3 (1967) 363.

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1. Si doped GaP layers grown on Si wafers by low temperature PE-ALD;Journal of Renewable and Sustainable Energy;2018-03

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