TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon-Reference-Cited by-同舟云学术

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TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon

Published:1992-02 Issue:2 Volume:54 Page:124-131
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Theodore N. D.,Alford T. L.,Carter C. B.,Mayer J. W.,Cheung N. W.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00323898.pdf

Reference41 articles.

1. J.S. Williams, J.M. Poate: In Ion Implantation and Beam Processing, ed. by J.S. Williams, J.M. Poate (Academic, New York 1984) Chap. 1

2. K. Murase, H. Harada: Trans. Inst. Electron and Commun. Eng. Jpn. Sect. E E 62, 709 (1979)

3. T. Koji, W.F. Tseng, J.W. Mayer, T. Suganuma: Solid-state Electron. 22, 335 (1979)

4. K.D. Beyer, M.R. Popaniak, T.H. Yeh: IBM Tech. Discl. Bull. 20, 1003 (1977)

5. H.W. Lam. R.F. Pinizziotta, H.T. Yuan, D.W. Bellavance: Electron. Lett. 17, 356 (1981)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanocrystals in crystalline silicon: Void formation and hollow particles;Journal of Materials Research;2001-09

2. Backscattering and electron microscopy study of mega‐electron volt gold implantation into silicon;Journal of Applied Physics;1994-12

3. Behavior and chemical state of gold atoms implanted into silicon;Laser and Ion Beam Modification of Materials;1994

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