Photoluminescence of Al x Ga1?x As/GaAs quantum well heterostructures grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Photoluminescence of Al x Ga1?x As/GaAs quantum well heterostructures grown by molecular beam epitaxy

Published:1984-01 Issue:1 Volume:33 Page:9-17
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Jung H.,Fischer A.,Ploog K.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF01197079.pdf

Reference37 articles.

1. R. Dingle: InFestkörperprobleme, ed. by H. J. Queisser (Pergamon-Vieweg, Braunschweig 1975) Vol. XV, p. 21

2. J.P. van der Ziel, R. Dingle, R.C. Miller, W. Wiegmann, W.A. Nordland, Jr.: Appl. Phys. Lett.26, 463 (1975)

3. N. Holonyak, Jr., R.M. Kolbas, W.D. Laidig, B.A. Vojak, R.D. Dupuis, P.D. Dapkus: Appl. Phys. Lett.33, 737 (1978)

4. W.T. Tsang, C. Weisbuch, R.C. Miller, R. Dingle: Appl. Phys. Lett.35, 673 (1979)

5. W.T. Tsang: Appl. Phys. Lett.39, 786 (1981)

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1. Evidence for photoluminescence band inp‐type Al0.67Ga0.33As related to nonequilibriumDX−centers;Journal of Applied Physics;1996-09

2. Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy;Journal of Applied Physics;1994-08-15

3. Excitons in indirect-gap AlxGa1-xAs;Semiconductor Science and Technology;1993-11-01

4. Optical dephasing in semiconductor mixed crystals;Physical Review B;1992-08-15

5. Experimental study of the Γ-Xelectron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structures;Physical Review B;1990-09-15

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