Electrical and optical properties of MOVPE grown GaAs1−x P x

Author:

Omling P.,Samuelson L.,Titze H.,Grimmeiss H. G.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Reference13 articles.

1. J. J. Tietjen andJ. A. Amick:J. Electrochem. Soc.,113, 724 (1966).

2. Proceedings of the International Conference on MOVPE, inJ. Crystal Growth,55, 1 (1981).

3. M. Inoue andK. Asahi:Jpn. J. Appl. Phys. 11, 919 (1972).

4. T. Saitoh andS. Minagawa:J. Electrochem. Soc.,120, 656 (1973).

5. L. Samuelson, P. Omling, H. Titze andH. G. Grimmeiss:J. Phys. C,12, 323 (1982).

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1. Copper as an electron trap in GaAs0.6P0.4;Applied Physics A Solids and Surfaces;1994-09

2. Chapter 8 Deep Level Defects in Epitaxial III/V Materials;Imperfections in III/V Materials;1993

3. Photoelectrochemical studies of a Ga(As,P)/GaAs/Ga(As,P)/n+‐GaAs multijunction electrode;Journal of Applied Physics;1989-02

4. Properties of theEL2 level inGaAs1−xPx;Physical Review B;1986-10-15

5. Copper deep acceptors in GaAs1-xPxalloy system;Journal of Physics C: Solid State Physics;1985-02-20

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