CW IMPATTs made from silicon molecular beam epitaxy material-Reference-Cited by-同舟云学术

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CW IMPATTs made from silicon molecular beam epitaxy material

Published:1986-03 Issue:3 Volume:7 Page:305-315
ISSN:0195-9271
Container-title:International Journal of Infrared and Millimeter Waves
language:en
Short-container-title:Int J Infrared Milli Waves

Author:

Luy J. F.,Kibbel H.,Kasper E.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Link

http://link.springer.com/content/pdf/10.1007/BF01010849.pdf

Reference15 articles.

1. H. Jorke, H. Kibbel 1st Int. Symposium on Si-MBE, Toronto 1985

2. U. König, H. J. Herzog, H. Jorke, E. Kasper, H. Kibbel Collected Paper of MBE-CST-2, Tokyo 1982, p. 193

3. W. Kern RCA Engineer, 28?4, July/August 1983

4. S. S. Iyer, R. A. Metzger, F. J. Allen J. Appl. Phys. 52, 5608 (1981)

5. D. Streit, R. A. Metzger, F. G. Allen Appl. Phys. Letter 44 (2) Jan. 1984

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material-Related Growth Characteristics in MBE;Molecular Beam Epitaxy;1996

2. Silicon Ka band low noise BARITT diodes for radar system applications grown by MBE;Solid-State Electronics;1994-09

3. Silicon mm-Wave IMPATTs;IETE Technical Review;1993-07

4. Comparison of theoretical and experimental 60 GHz silicon IMPATT diode performance;Electronics Letters;1991

5. Photoluminescence assessment of MBE silicon;Semiconductor Science and Technology;1990-12-01

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